Part Image

2N6851 - Infineon

Description: Trans MOSFET P-CH 200V 4A 3-Pin TO-39

Download 2N6851 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
2N6851 - Infineon PCB footprint - Other - Other - 2N6851-1
click to zoom

2N6851 Details

  • Manufacturer Part Number:

    2N6851

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.75

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    75 mJ

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-205AF

  • JESD-30 Code:

    O-MBCY-W3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    MILITARY STANDARD (USA)

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N6851 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-01, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal contact between the device and the heat sink. Additionally, consider using a thermal interface material to reduce thermal resistance.
  • The 2N6851 is a qualified device for automotive and industrial applications, but for aerospace applications, additional testing and qualification may be required. Engineers should consult Infineon's quality and reliability documentation, such as the AEC-Q101 qualification, and ensure compliance with relevant industry standards.
  • To troubleshoot issues with the 2N6851, engineers should follow a systematic approach, including reviewing the circuit design, checking for proper component selection and layout, and verifying that the device is operated within its recommended specifications. Infineon's application notes and technical support resources can also provide valuable guidance.
  • Yes, the 2N6851 is a high-power device that can generate electromagnetic interference (EMI). Engineers should follow good EMI/EMC design practices, such as using shielding, filtering, and proper PCB layout, to minimize EMI and ensure compliance with relevant standards.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

2N6851 Overview

Use the download button to access the 2N6851 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like 2N685, or try a keyword search, such as Other Transistors

Parts related to 2N6851

Showing 0 results