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2N7000 - STMicroelectronics

Description: N-channel MOSFET,2N7000 0.2A 60V

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2N7000 - STMicroelectronics PCB footprint - Other - Other - TO-92
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2N7000 - STMicroelectronics  - 3D model - Other - TO-92
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2N7000 Details

  • Manufacturer Part Number:

    2N7000

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Additional Feature:

    LOW THRESHOLD

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.35 A

  • Drain-source On Resistance-Max:

    5.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N7000 Frequently Asked Questions (FAQs)

  • The 2N7000 is a low-power, low-voltage N-channel MOSFET, and its maximum operating frequency is not explicitly stated in the datasheet. However, based on its characteristics, it is suitable for low-frequency applications up to a few hundred kHz.
  • To ensure the 2N7000 is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the drain-source voltage (Vds) should be within the recommended operating range. Additionally, the gate current should be limited to prevent overheating.
  • The maximum power dissipation of the 2N7000 is not explicitly stated in the datasheet. However, based on its thermal resistance and package characteristics, the maximum power dissipation can be estimated to be around 1-2W. It's essential to perform thermal calculations and ensure proper heat sinking to prevent overheating.
  • While the 2N7000 can be used as a switch, it's not suitable for high-current applications due to its limited current rating (maximum continuous drain current is 200mA). For high-current applications, consider using a more suitable MOSFET with a higher current rating.
  • To protect the 2N7000 from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. Additionally, consider adding ESD protection circuits or devices in your design to prevent damage from static electricity.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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