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2N7000 - Vishay

Description: N-Channel 60-V 0.2A (D-S) MOSFET 5ohm @ VGS = 10 V

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2N7000 - Vishay PCB footprint - Other - Other - TO-226AA_(TO-92)
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2N7000 - Vishay  - 3D model - Other - TO-226AA_(TO-92)
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2N7000 Details

  • Manufacturer Part Number:

    2N7000

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-92, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.2 A

  • Drain-source On Resistance-Max:

    5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-226AA

  • JESD-30 Code:

    O-PBCY-W3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    0.4 W

  • Power Dissipation-Max (Abs):

    0.4 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N7000 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the 2N7000 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, the SOA is typically limited by the device's thermal characteristics, such as the maximum junction temperature (Tj) and the thermal resistance (Rthja). For the 2N7000, the maximum Tj is 150°C, and the Rthja is 62.5°C/W. Based on these values, the SOA can be estimated to be around 1.5 A at 25°C.
  • To ensure the 2N7000 is properly biased for optimal performance, it's essential to follow the recommended biasing conditions outlined in the datasheet. This includes applying a gate-source voltage (Vgs) between 2.5 V and 5 V, and a drain-source voltage (Vds) within the specified range (up to 60 V). Additionally, the gate current (Ig) should be limited to the recommended maximum value (100 μA) to prevent overheating and ensure reliable operation.
  • The typical switching frequency of the 2N7000 is not explicitly stated in the datasheet, but it can be estimated based on the device's switching characteristics. The 2N7000 has a typical rise time (tr) of 10 ns and a fall time (tf) of 15 ns, which suggests it can operate at frequencies up to several hundred kHz. However, the actual switching frequency will depend on the specific application, circuit design, and operating conditions.
  • Yes, the 2N7000 can be used as a high-side switch, but it requires additional circuitry to ensure proper operation. Since the 2N7000 is a low-side switch, it's designed to operate with the source terminal connected to ground or a negative voltage. To use it as a high-side switch, you'll need to add a level-shifting circuit or a bootstrap circuit to ensure the gate-source voltage (Vgs) is properly biased.
  • The 2N7000 has a built-in ESD protection diode, but it's essential to follow proper handling and storage procedures to prevent ESD damage. This includes using anti-static packaging, wrist straps, and mats, as well as avoiding direct contact with the device's pins. Additionally, it's recommended to add external ESD protection devices, such as TVS diodes or ESD arrays, to the circuit to provide additional protection.

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