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2N7002 - STMicroelectronics

Description: This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

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2N7002 - STMicroelectronics - PCB symbol
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2N7002 - STMicroelectronics PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT23-3L drawing --2025
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2N7002 - STMicroelectronics - 3D model - SOT23 (3-Pin) - SOT23-3L drawing --2025
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2N7002 Details

  • Manufacturer Part Number:

    2N7002

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Additional Feature:

    LOW THRESHOLD

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.2 A

  • Drain-source On Resistance-Max:

    5.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N7002 Frequently Asked Questions (FAQs)

  • The 2N7002 is a low-power, low-voltage N-channel MOSFET, and it's not designed for high-frequency operation. However, it can be used in switching applications up to 100 kHz.
  • To ensure the 2N7002 is fully turned on, you should apply a gate-source voltage (Vgs) of at least 4.5V, and the gate current should be limited to 10mA or less to prevent overheating.
  • The maximum power dissipation of the 2N7002 is 1.4W at a junction temperature of 25°C. However, this value can be derated based on the ambient temperature and the thermal resistance of the package.
  • While the 2N7002 can handle up to 1.5A of continuous drain current, it's not suitable for high-current applications due to its relatively high on-state resistance (Rds(on)) of 2.5Ω. For high-current applications, consider using a MOSFET with a lower Rds(on) value.
  • To protect the 2N7002 from ESD, handle the device by the body, not the leads. Use an anti-static wrist strap or mat, and ensure the workspace is ESD-safe. You can also use ESD protection devices, such as TVS diodes, in your circuit design.

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2N7002 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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2N7002 Alternates

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For a full list of alternate parts for 2N7002, check out Findchips.com