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2N7002ET7G - onsemi

Description: Small ; Low RDS(on); Trench Technology; RoHS Compliant

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PCB Footprints
2N7002ET7G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23 (TO−23_
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3D Models
2N7002ET7G - onsemi  - 3D model - SOT23 (3-Pin) - SOT−23 (TO−23_
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2N7002ET7G Details

  • Manufacturer Part Number:

    2N7002ET7G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2019-03-14

  • Manufacturer:

    onsemi

  • YTEOL:

    6.5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.26 A

  • Drain-source On Resistance-Max:

    2.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N7002ET7G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2N7002ET7G is -55°C to 150°C.
  • Yes, the 2N7002ET7G is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
  • The maximum gate-source voltage that can be applied to the 2N7002ET7G is ±20V.
  • No, the 2N7002ET7G is not suitable for linear amplifier applications due to its high drain-source resistance and low transconductance.
  • Yes, the 2N7002ET7G is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other digital logic device.

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2N7002ET7G Overview

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