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2N7002K - PANJIT

Description: Small Signal MOSFET (Rds(on)>1Ω) - 2N7002K , N Polarity, Single, 0.3A, 60V, SOT-23

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2N7002K Details

  • Manufacturer Part Number:

    2N7002K

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China, Taiwan

  • ECCN Code:

    EAR99

  • Manufacturer:

    PanJit Semiconductor

  • YTEOL:

    6.5

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.3 A

  • Drain-source On Resistance-Max:

    3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N7002K Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2N7002K is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
  • To ensure the 2N7002K is fully turned on, apply a gate-source voltage (Vgs) of at least 4.5V, and a drain-source voltage (Vds) of at least 1V. This will minimize the on-state resistance (Rds(on)) and ensure maximum current handling.
  • The recommended gate resistor value for the 2N7002K is between 1kΩ to 10kΩ, depending on the specific application and switching frequency. A higher gate resistor value can help reduce power consumption, but may increase switching time.
  • Yes, the 2N7002K can be used as a high-side switch, but it requires a bootstrap circuit to generate a gate voltage higher than the drain voltage. This is because the 2N7002K is a N-channel MOSFET, and the gate-source voltage must be positive to turn it on.
  • To protect the 2N7002K from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB has proper ESD protection circuits, such as TVS diodes or ESD protection arrays. Also, avoid touching the device pins or handling the device in close proximity to ESD-generating sources.

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2N7002K Overview

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