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2N7002KW - PANJIT

Description: Small Signal MOSFET (Rds(on)>1Ω) - 2N7002KW, N Channel, Single, 0.1A, 60V, SOT-323

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PCB Footprints
2N7002KW - PANJIT PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT 323
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3D Models
2N7002KW - PANJIT  - 3D model - SOT23 (3-Pin) - SOT 323
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2N7002KW Details

  • Manufacturer Part Number:

    2N7002KW

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • Pin Count:

    3

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • Manufacturer:

    PanJit Semiconductor

  • YTEOL:

    6.5

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.115 A

  • Drain-source On Resistance-Max:

    3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N7002KW Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N7002KW is -55°C to 150°C, although the datasheet only specifies a range of -40°C to 125°C for certain parameters.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 0V and 20V. Additionally, the device should be operated within the recommended current limits to prevent overheating.
  • The maximum allowable power dissipation for the 2N7002KW is 1.4W, assuming a junction temperature of 150°C. However, this value can be derated based on the ambient temperature and other operating conditions.
  • Yes, the 2N7002KW can be used in high-frequency applications up to 100 MHz, although the device's performance may degrade at higher frequencies due to its internal capacitances and resistances.
  • To protect the 2N7002KW from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is properly grounded during assembly and testing.

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2N7002KW Overview

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