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2N7002KWHE3-TP - MCC

Description: Small Signal MOSFETS

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PCB Footprints
2N7002KWHE3-TP - MCC PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-323 (Thickness 1.2mm)
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3D Models
2N7002KWHE3-TP - MCC  - 3D model - SOT23 (3-Pin) - SOT-323 (Thickness 1.2mm)
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2N7002KWHE3-TP Details

  • Manufacturer Part Number:

    2N7002KWHE3-TP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    6

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.34 A

  • Drain-source On Resistance-Max:

    3 Ω

  • JESD-609 Code:

    e3

  • Peak Reflow Temperature (Cel):

    260

  • Terminal Finish:

    Matte Tin (Sn)

  • Time@Peak Reflow Temperature-Max (s):

    10

2N7002KWHE3-TP Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N7002KWHE3-TP is -55°C to 150°C.
  • The 2N7002KWHE3-TP is a logic-level MOSFET, which means it can be driven directly by a microcontroller or other low-voltage logic device.
  • The maximum safe operating area (SOA) for the 2N7002KWHE3-TP is typically defined by the manufacturer as the maximum voltage and current that the device can handle without damage, and is usually provided in the datasheet or application notes.
  • Yes, the 2N7002KWHE3-TP is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
  • No, the 2N7002KWHE3-TP is not a radiation-hardened device, and it is not intended for use in high-radiation environments such as space or nuclear applications.

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2N7002KWHE3-TP Overview

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