Part Image

2N7002PV - Nexperia

Description: 60 V, 350 mA dual N-channel Trench MOSFET

Download 2N7002PV Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
2N7002PV - Nexperia PCB footprint - Other - Other - 2N7002PV-5
click to zoom

2N7002PV Details

  • Manufacturer Part Number:

    2N7002PV

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-666, 6 PIN

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Nexperia

  • YTEOL:

    5

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.35 A

  • Drain-source On Resistance-Max:

    1.6 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    4 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Pulsed Drain Current-Max (IDM):

    1.2 A

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N7002PV Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2N7002PV is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
  • To ensure the 2N7002PV is fully turned on, apply a gate-source voltage (Vgs) of at least 4.5V, and a drain-source voltage (Vds) of at least 1V. This will minimize the on-state resistance (Rds(on)) and ensure maximum current flow.
  • The maximum current rating for the 2N7002PV is 500mA, but it's recommended to operate within 200mA to ensure reliable operation and minimize thermal stress.
  • Yes, the 2N7002PV can be used as a switch in high-frequency applications up to 100 kHz, but be aware of the device's switching characteristics, such as rise and fall times, and ensure proper PCB layout to minimize parasitic inductance and capacitance.
  • To protect the 2N7002PV from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure the PCB has proper ESD protection circuits, such as TVS diodes or resistors, to prevent damage from static electricity.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

2N7002PV Overview

Use the download button to access the 2N7002PV schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like 2N700, or try a keyword search, such as Power Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

Parts related to 2N7002PV

Showing 0 results

2N7002PV Alternates

Showing results

Image Part Number Model
Part Image 2N7002PV NXP Semiconductors

Power Field-Effect Transistor, 0.35A I(D), 60V, 1.6ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET