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2N7261 - Infineon

Description: RADIATION HARDENED POWER MOSFET THRU-HOLE TO-205AF (TO-39)

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2N7261 - Infineon PCB footprint - Other - Other - 2N7261-3
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2N7261 Details

  • Manufacturer Part Number:

    2N7261

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    RADIATION HARDENED

  • Avalanche Energy Rating (Eas):

    130 mJ

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-205AF

  • JESD-30 Code:

    O-MBCY-W3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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2N7261 Overview

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Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Part Image 2N7261H International Rectifier

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Part Image IRHF8130PBF Infineon Technologies AG

Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF