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2SA1182YTE85L - Toshiba

Description: 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236

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PCB Footprints
2SA1182YTE85L - Toshiba PCB footprint - Other - Other - 2SA1182YTE85L-1
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3D Models
2SA1182YTE85L - Toshiba  - 3D model - Other - 2SA1182YTE85L-1
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2SA1182YTE85L Details

  • Manufacturer Part Number:

    2SA1182YTE85L

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    30 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    125 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    PNP

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    200 MHz

  • VCEsat-Max:

    0.25 V

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2SA1182YTE85L Overview

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