Part Image

2SA1941-O(Q) - Toshiba

Description: Tr.,PNP,140V/10A,hfe=80to160,TO-3P(N)

Download 2SA1941-O(Q) Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
2SA1941-O(Q) - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2SA1941-O(Q)-1
click to zoom
3D Models
2SA1941-O(Q) - Toshiba  - 3D model - Transistor Outline, Vertical - 2SA1941-O(Q)-1
click to zoom

2SA1941-O(Q) Details

  • Manufacturer Part Number:

    2SA1941-O(Q)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Base Capacitance-Max:

    320 pF

  • Collector-Emitter Voltage-Max:

    140 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-XSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    100 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    30 MHz

  • VCEsat-Max:

    2 V

2SA1941-O(Q) Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SA1941-O(Q) transistor is -55°C to 150°C.
  • To ensure reliability, it is recommended to derate the transistor's power dissipation according to the ambient temperature, and to use a heat sink if necessary.
  • The maximum allowable current for the 2SA1941-O(Q) transistor is 10A, but this value may vary depending on the application and operating conditions.
  • To protect the transistor from ESD, it is recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat, and to store the device in an anti-static bag or container.
  • Yes, the 2SA1941-O(Q) transistor can be used in switching applications, but it is recommended to ensure that the transistor is properly biased and that the switching frequency is within the recommended range.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

2SA1941-O(Q) Overview

Use the download button to access the 2SA1941-O(Q) schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like 2SA19, or try a keyword search, such as Power Bipolar Transistors

Parts related to 2SA1941-O(Q)

Showing 0 results