Please enter a minimum 3 letters or numbers
Technical Content
Part Image

2SA1943N(S1,E,S) - Toshiba

Description: Bip Tr.,PNP,-230V/-15A,TO-3P(N) Toshiba 2SA1943N(S1,E,S) PNP Bipolar Transistor, 15 A, 230 V, 3-Pin TO-3P

Download 2SA1943N(S1,E,S) Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
2SA1943N(S1,E,S) - Toshiba - PCB symbol
click to zoom
PCB Footprints
2SA1943N(S1,E,S) - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3-Pin TO-3P
click to zoom
3D Models
2SA1943N(S1,E,S) - Toshiba - 3D model - Transistor Outline, Vertical - 3-Pin TO-3P
click to zoom

2SA1943N(S1,E,S) Details

  • Manufacturer Part Number:

    2SA1943N(S1,E,S)

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-3P(N), 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    15 A

  • Collector-Base Capacitance-Max:

    360 pF

  • Collector-Emitter Voltage-Max:

    230 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    35

  • JESD-30 Code:

    R-XSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    150 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    30 MHz

  • VCEsat-Max:

    3 V

2SA1943N(S1,E,S) Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SA1943N is -55°C to 150°C.
  • To ensure reliability, it's essential to follow proper derating guidelines, use a suitable heat sink, and ensure good thermal conductivity between the transistor and the heat sink.
  • The maximum allowable power dissipation for the 2SA1943N is 125W at a case temperature of 25°C.
  • Yes, the 2SA1943N can be used in switching applications, but it's essential to ensure that the transistor is properly biased and that the switching frequency is within the recommended range.
  • To prevent thermal runaway, ensure that the transistor is properly heat-sinked, and the thermal resistance (Rth) is within the recommended range. Also, avoid operating the transistor at high temperatures and high currents simultaneously.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

2SA1943N(S1,E,S) Overview

Use the download button to access the 2SA1943N(S1,E,S) schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like 2SA19, or try a keyword search, such as Power Bipolar Transistors

Suggested Parts

If you searched for 2SA1943N(S1,E,S), you might also be interested in these parts:
Part Number
2SA1943-O(S1,F
2SA1943-R(Q)
2SC5200-O(S1,F
2STA1943
MIC5200-3.3YM-TR
2SA1943OTU
2SA1943-O
TTA1943(Q)
TTC5200(Q)
TTA1943

Parts related to 2SA1943N(S1,E,S)

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑