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2SA812 - Galaxy

Description: Silicon Epitaxial Planar Transistor,Commplementary to 2SC1623.  High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA)  High Voltage: VCEO=-50V.

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PCB Footprints
2SA812 - Galaxy PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23_2022
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3D Models
2SA812 - Galaxy  - 3D model - SOT23 (3-Pin) - SOT-23_2022
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2SA812 Details

  • Manufacturer Part Number:

    2SA812

  • Part Life Cycle Code:

    Active

  • Package Description:

    SMALL OUTLINE, R-PDSO-G3

  • Reach Compliance Code:

    Unknown

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Galaxy Semi-Conductor Co Ltd

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    90

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    PNP

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    180 MHz

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2SA812 Overview

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