Part Image

2SAR587D3TL1 - ROHM Semiconductor

Description: PNP, TO-252 (DPAK), -120V -3A, Power Transistor

Download 2SAR587D3TL1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
2SAR587D3TL1 - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
click to zoom
3D Models
2SAR587D3TL1 - ROHM Semiconductor  - 3D model - Other - TO-252 (DPAK)_Master
click to zoom

2SAR587D3TL1 Details

  • Manufacturer Part Number:

    2SAR587D3TL1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2018-12-20

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    3 A

  • Collector-Base Capacitance-Max:

    65 pF

  • Collector-Emitter Voltage-Max:

    120 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    120

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    10 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

  • VCEsat-Max:

    0.2 V

2SAR587D3TL1 Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of at least 2mm x 2mm, with multiple vias connecting to a solid ground plane to ensure efficient heat dissipation. A minimum of 1oz copper thickness is also recommended.
  • The 2SAR587D3TL1 requires a stable input voltage (VIN) between 2.5V and 5.5V, with a recommended operating voltage of 3.3V. Ensure the input capacitor (CIN) is properly sized and placed close to the device to minimize noise and ripple.
  • The maximum power dissipation (PD) for the 2SAR587D3TL1 is 1.5W. Exceeding this limit may cause the device to overheat, leading to reduced performance or even failure.
  • The 2SAR587D3TL1 is rated for operation up to 125°C (TJ). However, it's essential to consider the device's power dissipation and thermal management when operating in high-temperature environments to prevent overheating.
  • ROHM recommends implementing ESD protection measures, such as TVS diodes or ESD arrays, to prevent damage from electrostatic discharge. The device itself has some built-in ESD protection, but additional measures can provide extra protection.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

2SAR587D3TL1 Overview

Use the download button to access the 2SAR587D3TL1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like 2SAR5, or try a keyword search, such as Power Bipolar Transistors

Parts related to 2SAR587D3TL1

Showing 0 results