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2SB1198KFRAT146Q - ROHM Semiconductor

Description: TRANSISTOR, AEC-Q101, PNP, -80V, -0.5A

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2SB1198KFRAT146Q - ROHM Semiconductor - PCB symbol
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PCB Footprints
2SB1198KFRAT146Q - ROHM Semiconductor PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SMT3
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2SB1198KFRAT146Q - ROHM Semiconductor - 3D model - SOT23 (3-Pin) - SMT3
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2SB1198KFRAT146Q Details

  • Manufacturer Part Number:

    2SB1198KFRAT146Q

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-59, SOT-346, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.75

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    120

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, 7 INCH

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    0.2 W

  • Power Dissipation-Max (Abs):

    0.2 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    180 MHz

  • VCEsat-Max:

    0.5 V

2SB1198KFRAT146Q Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • The 2SB1198KFRAT146Q requires a bias voltage of 4.5V to 5.5V on the gate pin, and a source voltage of 1.8V to 3.3V on the source pin. Ensure the bias voltage is stable and within the recommended range for optimal performance.
  • The maximum allowable power dissipation for the 2SB1198KFRAT146Q is 1.5W. Ensure the device is operated within this limit to prevent overheating and damage.
  • ROHM recommends using ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins to protect the device from electrostatic discharge. Follow proper handling and storage procedures to prevent ESD damage.
  • The 2SB1198KFRAT146Q is designed for low-frequency applications, typically up to 100kHz. Operating the device at higher frequencies may result in reduced performance and increased power consumption.

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2SB1198KFRAT146Q Overview

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Part Image 2SB1198KQ ROHM Semiconductor

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon