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2SB1386-R-TP - MCC

Description: Bipolar (BJT) Transistor PNP 20 V 5 A 120MHz 500 mW Surface Mount SOT-89

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PCB Footprints
2SB1386-R-TP - MCC PCB footprint - Other - Other - 2SB1386-R-TP-5
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3D Models
2SB1386-R-TP - MCC  - 3D model - Other - 2SB1386-R-TP-5
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2SB1386-R-TP Details

  • Manufacturer Part Number:

    2SB1386-R-TP

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, PLASTIC, PACKAGE-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    7

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    20 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    180

  • JESD-30 Code:

    R-PSSO-F3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    120 MHz

2SB1386-R-TP Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the 2SB1386-R-TP is a standard SOT-23 package with a 1.3mm x 0.8mm pad size and a 0.5mm lead pitch.
  • The 2SB1386-R-TP is rated for operation up to 150°C, but it's recommended to derate the power dissipation at higher temperatures to ensure reliability. Consult the datasheet for thermal derating information.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet, including the base-emitter voltage (VBE) and collector-emitter voltage (VCE). Additionally, consider using a resistor network to stabilize the bias voltage.
  • The 2SB1386-R-TP has a transition frequency (fT) of 100 MHz, making it suitable for low-to-moderate frequency applications. However, for high-frequency applications above 100 MHz, a different transistor may be more suitable.
  • Yes, the 2SB1386-R-TP can be used in switching applications, but it's essential to consider the transistor's switching characteristics, such as the rise and fall times, and ensure that the switching frequency is within the recommended range.

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2SB1386-R-TP Overview

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