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2SC1969 - Mitsubishi

Description: NPN EPITAXIAL PLANAR TYPE

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PCB Footprints
2SC1969 - Mitsubishi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - T-30
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2SC1969 - Mitsubishi  - 3D model - Transistor Outline, Vertical - T-30
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2SC1969 Details

  • Manufacturer Part Number:

    2SC1969

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SFM

  • Package Description:

    T-30, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Mitsubishi Electric

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    6 A

  • Collector-Emitter Voltage-Max:

    25 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    20 W

  • Power Dissipation-Max (Abs):

    1.7 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

2SC1969 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the 2SC1969 is not explicitly stated in the datasheet, but it can be estimated based on the transistor's voltage and current ratings. As a general rule, it's recommended to operate the transistor within 70-80% of its maximum voltage and current ratings to ensure reliable operation.
  • To ensure the 2SC1969 is properly biased for linear operation, you should follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (Vbe) to around 0.7V and the collector-emitter voltage (Vce) to around 1-2V. You may also need to adjust the bias resistors and capacitors to achieve the desired operating point.
  • The thermal resistance of the 2SC1969 package is not explicitly stated in the datasheet, but it can be estimated based on the package type and size. For a TO-220 package like the 2SC1969, the thermal resistance is typically around 2-5°C/W. This value can be used to estimate the maximum power dissipation of the transistor under different operating conditions.
  • While the 2SC1969 is primarily designed for linear amplification, it can be used in switching applications with some caution. However, you should be aware that the transistor's switching characteristics, such as its rise and fall times, may not be optimized for high-frequency switching. Additionally, the transistor's maximum switching frequency and duty cycle should be carefully evaluated to avoid overheating or premature failure.
  • To protect the 2SC1969 from electrostatic discharge (ESD), you should follow standard ESD protection practices, such as using anti-static wrist straps, mats, and packaging materials. Additionally, you can add ESD protection devices, such as diodes or resistors, to the circuit to absorb or divert ESD pulses.

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