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2SC2712-GR,LF - Toshiba

Description: Bipolar Transistors - BJT Transistor Lo Freq 0.15A 50V

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2SC2712-GR,LF - Toshiba PCB footprint - Other - Other - 2-3Z1S
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2SC2712-GR,LF - Toshiba  - 3D model - Other - 2-3Z1S
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2SC2712-GR,LF Details

  • Manufacturer Part Number:

    2SC2712-GR,LF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    7

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.15 A

  • Collector-Base Capacitance-Max:

    3.5 pF

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    200

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    125 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    0.15 W

  • Power Dissipation-Max (Abs):

    0.15 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    80 MHz

  • VCEsat-Max:

    0.25 V

2SC2712-GR,LF Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the 2SC2712-GR,LF is a standard SOT-23 package footprint with a 1.3mm x 1.3mm pad size and a 0.5mm spacing between pads.
  • The 2SC2712-GR,LF is rated for operation up to 150°C, but it's recommended to derate the power dissipation at higher temperatures to ensure reliability. Consult the datasheet for thermal resistance and power derating curves.
  • To ensure optimal performance, bias the 2SC2712-GR,LF with a base-emitter voltage (VBE) between 0.6V to 0.8V, and a collector-emitter voltage (VCE) within the recommended operating range. Consult the datasheet for specific biasing recommendations.
  • The 2SC2712-GR,LF has a transition frequency (fT) of 3GHz, making it suitable for high-frequency applications up to several hundred MHz. However, the transistor's performance may degrade at higher frequencies due to internal capacitances and inductances.
  • The 2SC2712-GR,LF is a general-purpose NPN transistor, not specifically designed for high-speed switching applications. However, it can be used in low-to-moderate frequency switching applications with proper design considerations, such as minimizing switching times and ensuring adequate base drive.

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2SC2712-GR,LF Overview

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