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2SC2712-GR(F) - Toshiba

Description: Vceo50V,Ic0.15A,Vce(sat)0.25V,hfe200to40 Toshiba 2SC2712-GR(F) NPN Bipolar Transistor, 0.15 A, 50 V, 3-Pin SC-59

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2SC2712-GR(F) - Toshiba PCB footprint - Other - Other - SC-59
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2SC2712-GR(F) - Toshiba  - 3D model - Other - SC-59
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2SC2712-GR(F) Details

  • Manufacturer Part Number:

    2SC2712-GR(F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.15 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    200

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    125 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.15 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    80 MHz

2SC2712-GR(F) Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the 2SC2712-GR(F) transistor is a standard SOT-323 package with a 1.7mm x 1.3mm body size and 0.5mm lead pitch. The recommended land pattern is available in the Toshiba datasheet or can be found in IPC-7351 standards.
  • To ensure reliability in high-temperature applications, it is recommended to follow proper derating guidelines for the transistor's power dissipation, voltage, and current ratings. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature, and ensure proper PCB design and layout to minimize thermal resistance.
  • Yes, the 2SC2712-GR(F) transistor can be used in switching applications, but it is essential to consider the transistor's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the transistor's capabilities. Additionally, proper snubber circuits or gate resistors may be required to prevent ringing and ensure reliable switching.
  • To protect the 2SC2712-GR(F) transistor from ESD, it is recommended to follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, consider adding ESD protection circuits, such as TVS diodes or resistors, in the application to prevent ESD damage.
  • The equivalent replacement part for the 2SC2712-GR(F) transistor may vary depending on the specific application requirements. However, some possible alternatives include the 2SC2712-GR(F) from other manufacturers, such as Rohm or ON Semiconductor, or similar transistors with similar characteristics, such as the 2SC1815 or 2SC2073.

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2SC2712-GR(F) Overview

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