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2SC4102U3T106R - ROHM Semiconductor

Description: NPN, SOT-323, 120V 50mA, High-Voltage Amplifier Transistor

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2SC4102U3T106R - ROHM Semiconductor PCB footprint - Other - Other - UMT3 (SC-70)_1
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2SC4102U3T106R - ROHM Semiconductor  - 3D model - Other - UMT3 (SC-70)_1
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2SC4102U3T106R Details

  • Manufacturer Part Number:

    2SC4102U3T106R

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-70, SOT-323, 3 PIN

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2019-01-24

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.05 A

  • Collector-Emitter Voltage-Max:

    120 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    180

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.2 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    140 MHz

  • VCEsat-Max:

    0.5 V

2SC4102U3T106R Frequently Asked Questions (FAQs)

  • ROHM recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves for power dissipation, and to ensure good thermal design and heat sinking. Additionally, consider using a thermistor or thermal sensor to monitor the device temperature.
  • The maximum allowed voltage for the gate-source and gate-drain pins is ±20V, but it's recommended to keep the voltage within ±15V to ensure reliable operation and prevent damage to the device.
  • ROHM recommends using ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins to prevent damage from electrostatic discharge. Additionally, follow proper handling and storage procedures to prevent ESD damage.
  • ROHM recommends storing the 2SC4102U3T106R in a dry, cool place, away from direct sunlight and moisture. The storage temperature should be between -40°C to 125°C, and the humidity should be below 60%.

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2SC4102U3T106R Overview

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