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2SC4617G - onsemi

Description: Obsolete - RF Transistor, NPN Single MCP, 6 V, 15 mA, fT = 5 GHz

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PCB Footprints
2SC4617G - onsemi PCB footprint - Other - Other - 2SC4617G-1
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2SC4617G - onsemi  - 3D model - Other - 2SC4617G-1
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2SC4617G Details

  • Manufacturer Part Number:

    2SC4617G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC-75 (SOT-416) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    463-01

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    120

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.125 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    180 MHz

2SC4617G Frequently Asked Questions (FAQs)

  • The maximum SOA for the 2SC4617G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure safe operation.
  • To ensure proper biasing, follow the recommended biasing circuit and component values provided in the datasheet or application notes. Additionally, consider the device's current gain (hFE) and base-emitter voltage (VBE) when designing the biasing circuit.
  • For optimal thermal performance, use a PCB layout that allows for good heat dissipation, such as using thermal vias and a heat sink. Ensure the device is mounted on a suitable heat sink and follow the recommended thermal management guidelines in the datasheet or application notes.
  • Yes, the 2SC4617G can be used in switching applications, but consider the device's switching characteristics, such as turn-on and turn-off times, and ensure the device is properly biased and driven to minimize switching losses.
  • To protect the 2SC4617G from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, design the circuit with ESD protection components, such as TVS diodes or resistors, to prevent damage from static electricity.

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2SC4617G Overview

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Part Image 2SC4617 Tak Cheong Electronics (Holdings) Co Ltd

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Part Image 2SC4617 Motorola Semiconductor Products

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Part Image 2SC4617 onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Part Image 2SC4617R Micro Commercial Components

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Part Image 2SC4617TR ROHM Semiconductor

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For a full list of alternate parts for 2SC4617G, check out Findchips.com