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2SC5200N(S1,E,S) - Toshiba

Description: Bip Tr.,NPN,230V/15A,TO-3P(N) Toshiba 2SC5200N(S1,E,S) NPN Bipolar Transistor, 15 A, 230 V, 3-Pin TO-3P

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2SC5200N(S1,E,S) - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-16C1S_1
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2SC5200N(S1,E,S) - Toshiba  - 3D model - Transistor Outline, Vertical - 2-16C1S_1
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2SC5200N(S1,E,S) Details

  • Manufacturer Part Number:

    2SC5200N(S1,E,S)

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-3P(N), 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    15 A

  • Collector-Base Capacitance-Max:

    200 pF

  • Collector-Emitter Voltage-Max:

    230 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    35

  • JESD-30 Code:

    R-XSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    150 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    30 MHz

  • VCEsat-Max:

    3 V

2SC5200N(S1,E,S) Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2SC5200N(S1,E,S) transistor is -55°C to 150°C.
  • Yes, the 2SC5200N(S1,E,S) transistor is suitable for high-frequency applications up to 5 GHz due to its high transition frequency (fT) of 7 GHz.
  • The maximum collector current rating for the 2SC5200N(S1,E,S) transistor is 10 A.
  • Yes, the 2SC5200N(S1,E,S) transistor is RoHS (Restriction of Hazardous Substances) compliant, making it suitable for use in environmentally friendly designs.
  • The typical storage time for the 2SC5200N(S1,E,S) transistor is 10-20 ns.

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2SC5200N(S1,E,S) Overview

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