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2SC5658T2LS - ROHM Semiconductor

Description: Bipolar Transistors - BJT NPN 50V 150MA

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PCB Footprints
2SC5658T2LS - ROHM Semiconductor PCB footprint - Other - Other - 2SC5658T2LS-2
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3D Models
2SC5658T2LS - ROHM Semiconductor  - 3D model - Other - 2SC5658T2LS-2
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2SC5658T2LS Details

  • Manufacturer Part Number:

    2SC5658T2LS

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-105

  • Package Description:

    VMT3, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    23 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.15 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    270

  • JESD-30 Code:

    R-PDSO-F3

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Copper (Sn/Cu)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    180 MHz

2SC5658T2LS Frequently Asked Questions (FAQs)

  • The maximum SOA for the 2SC5658T2LS is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to operate the transistor within 70-80% of its maximum ratings to ensure reliable operation.
  • To ensure proper biasing, follow the recommended biasing circuit and component values provided in the datasheet. Additionally, consider the transistor's current gain (hFE) and base-emitter voltage (VBE) when designing the biasing circuit. It's also important to ensure the transistor is operated within its recommended operating conditions.
  • For optimal thermal performance, it's recommended to use a heat sink with a thermal resistance of 10°C/W or lower. The PCB layout should be designed to minimize thermal resistance and ensure good heat dissipation. A recommended layout is to use a thermal via array under the transistor and a heat sink attached to the top of the transistor.
  • To protect the transistor from ESD, follow proper handling and storage procedures. Use an anti-static wrist strap or mat when handling the transistor, and store it in an anti-static bag or container. Additionally, consider adding ESD protection circuits, such as a transient voltage suppressor (TVS) or a Zener diode, to the PCB design.
  • The reliability and lifespan of the 2SC5658T2LS transistor depend on various factors, including operating conditions, temperature, and quality of the device. ROHM Semiconductor provides a reliability report and a lifespan estimation based on accelerated life testing. Consult the datasheet and reliability report for more information.

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2SC5658T2LS Overview

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