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2SC5706-E - onsemi

Description: Adoption of FBET and MBIT processes; Large current capacitance; Low collector-to-emitter saturation voltage; High-speed switching; High allowable power dissipation

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2SC5706-E - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2SC5706-E
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2SC5706-E - onsemi  - 3D model - Transistor Outline, Vertical - 2SC5706-E
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2SC5706-E Details

  • Manufacturer Part Number:

    2SC5706-E

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK / TP-FA

  • Package Description:

    LEAD FREE, SC-64, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    369AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    63 Weeks, 4 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    200

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e6

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    NPN

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Bismuth (Sn/Bi)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    400 MHz

2SC5706-E Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2SC5706-E is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, maximum junction temperature, and power dissipation. A safe operating area can be estimated to be around 10A/100V.
  • To ensure the 2SC5706-E is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is around 0.7V, and the collector-emitter voltage (Vce) is around 1-2V. Additionally, the base current should be limited to prevent saturation.
  • For optimal thermal management, it is recommended to use a heat sink with a thermal resistance of around 1-2°C/W. The PCB layout should ensure good thermal conductivity and minimal thermal resistance. A copper pour or thermal vias can be used to improve heat dissipation.
  • While the 2SC5706-E is primarily designed for linear applications, it can be used in switching applications with some caution. However, the device's switching characteristics, such as rise and fall times, may not be optimized for high-frequency switching. Additional circuitry, such as snubbers or gate resistors, may be required to prevent ringing or oscillations.
  • To protect the 2SC5706-E from electrostatic discharge (ESD), it is recommended to use ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit. Additionally, proper handling and storage procedures should be followed to prevent ESD damage.

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2SC5706-E Overview

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Part Image 2SC5706-H onsemi

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