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2SCR533PHZGT100 - ROHM Semiconductor

Description: NPN, SOT-89, 50V 3A, Middle Power Transistor for Automotive

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2SCR533PHZGT100 - ROHM Semiconductor PCB footprint - Other - Other - MPT3
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2SCR533PHZGT100 - ROHM Semiconductor  - 3D model - Other - MPT3
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2SCR533PHZGT100 Details

  • Manufacturer Part Number:

    2SCR533PHZGT100

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-62, SOT-89, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    8

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    3 A

  • Collector-Base Capacitance-Max:

    13 pF

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    180

  • JESD-30 Code:

    R-PSSO-F3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    2 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    320 MHz

  • VCEsat-Max:

    0.35 V

2SCR533PHZGT100 Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Ensure that the device is operated within the recommended temperature range (up to 150°C). Use a heat sink or thermal interface material to reduce thermal resistance. Also, consider derating the device's power dissipation at high temperatures.
  • ROHM recommends a gate drive voltage of 10-15V and a current of 1-2A to ensure fast switching times and low losses. The gate drive circuit should be designed to provide a low impedance path to the gate terminal.
  • Use a voltage clamp or TVS diode to protect the device from overvoltage conditions. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • Store the devices in their original packaging or in a dry, ESD-protected environment. Handle the devices by the body or the pins, avoiding touching the die or the leads. Use an ESD wrist strap or mat when handling the devices.

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2SCR533PHZGT100 Overview

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