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2SCR567F3TR - ROHM Semiconductor

Description: Small and Excellent Thermal Conductivity, NPN 2.5A 120V Middle Power Transistor

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PCB Footprints
2SCR567F3TR - ROHM Semiconductor PCB footprint - Other - Other - HUML2020L3_Master
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3D Models
2SCR567F3TR - ROHM Semiconductor  - 3D model - Other - HUML2020L3_Master
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2SCR567F3TR Details

  • Manufacturer Part Number:

    2SCR567F3TR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DFN2020-3S, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    8

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    2.5 A

  • Collector-Base Capacitance-Max:

    20 pF

  • Collector-Emitter Voltage-Max:

    120 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    120

  • JESD-30 Code:

    S-PDSO-N3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    1 W

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    220 MHz

  • VCEsat-Max:

    0.2 V

2SCR567F3TR Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SCR567F3TR is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range for extended periods.
  • To ensure proper biasing, follow the recommended biasing circuit and voltage levels specified in the datasheet. Additionally, consider the device's input and output impedance, as well as the load impedance, to ensure optimal performance and minimize signal distortion.
  • When designing the PCB layout, ensure that the device is placed in a thermally efficient location, and provide adequate heat dissipation paths. Keep the signal traces short and away from noise sources, and use a solid ground plane to minimize electromagnetic interference (EMI).
  • Proper thermal management is crucial for the 2SCR567F3TR. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material (TIM) if necessary. Also, consider the device's power dissipation and thermal resistance when designing the system's thermal management strategy.
  • The 2SCR567F3TR is a high-reliability device designed for automotive and industrial applications. ROHM Semiconductor provides a reliability report and qualification data, which can be used to estimate the device's MTBF (Mean Time Between Failures) and FIT (Failure In Time) rates. However, the actual reliability and durability of the device depend on various factors, including the operating conditions, PCB design, and manufacturing quality.

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2SCR567F3TR Overview

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