Part Image

2SD1664T100P - ROHM Semiconductor

Description: Bipolar Transistors - BJT NPN 32V 1A

Download 2SD1664T100P Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
2SD1664T100P - ROHM Semiconductor PCB footprint - Other - Other - 2SD1664T100P-4
click to zoom

2SD1664T100P Details

  • Manufacturer Part Number:

    2SD1664T100P

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    SC-62

  • Package Description:

    MPT3, SC-62, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    1 A

  • Collector-Emitter Voltage-Max:

    32 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    82

  • JESD-30 Code:

    R-PSSO-F3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    150 MHz

  • VCEsat-Max:

    0.4 V

2SD1664T100P Frequently Asked Questions (FAQs)

  • The maximum SOA for the 2SD1664T100P is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to operate the device within 70-80% of its maximum ratings to ensure reliability.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet, including the base-emitter voltage (VBE) and collector-emitter voltage (VCE). Additionally, consider the device's current gain (hFE) and saturation voltage (VCE(sat)) when designing the bias circuit.
  • For optimal thermal performance, use a PCB layout that allows for good heat dissipation, such as using thermal vias and a heat sink. Ensure the device is mounted on a thermally conductive material, and consider using a thermal interface material (TIM) to reduce thermal resistance.
  • Yes, the 2SD1664T100P can be used in switching applications, but consider the device's switching characteristics, such as the turn-on and turn-off times, and ensure the circuit is designed to minimize switching losses. Additionally, consider the device's maximum frequency rating and ensure the circuit is designed to operate within this range.
  • To protect the 2SD1664T100P from ESD, follow proper handling and storage procedures, such as using anti-static bags and wrist straps. In the circuit, consider adding ESD protection devices, such as TVS diodes or ESD protection arrays, to prevent damage from electrostatic discharge.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

2SD1664T100P Overview

Use the download button to access the 2SD1664T100P schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like 2SD16, or try a keyword search, such as Power Bipolar Transistors

Parts related to 2SD1664T100P

Showing 0 results