- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for 2SD2012(F,M)
- Part Number 2SD2012(F,M)
- Manufacturer Toshiba
- Pin Count 3
- Part Category Transistor BJT NPN
- Package Category Transistor Outline, Vertical
- Footprint Name Transistor Outline, Vertical - 2-10R1A_1
- Released Date Nov 6, 2018
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
2SD2012(F,M) Details
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Manufacturer Part Number:
2SD2012(F,M)
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Part Life Cycle Code:
Active Unconfirmed
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ECCN Code:
EAR99
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Manufacturer:
Toshiba America Electronic Components
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YTEOL:
3.5
2SD2012(F,M) Frequently Asked Questions (FAQs)
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The recommended PCB footprint for the 2SD2012(F,M) transistor is a standard TO-220 package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
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While the 2SD2012(F,M) transistor is suitable for switching applications, its high-frequency performance is limited due to its relatively high transition frequency (fT) of 30MHz. For high-frequency switching applications, a transistor with a higher fT is recommended.
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To ensure proper heat-sinking, the 2SD2012(F,M) transistor should be mounted on a heat sink with a thermal resistance of less than 10°C/W. The heat sink should be securely attached to the transistor using a thermal interface material and screws or clips.
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The maximum safe operating area (SOA) for the 2SD2012(F,M) transistor is defined by the boundaries of the output characteristics curves in the datasheet. Operating the transistor outside of these boundaries can lead to reduced reliability and potential failure.
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While the 2SD2012(F,M) transistor is primarily designed for switching applications, it can be used in linear amplifier applications with careful consideration of its linearity, gain, and thermal performance. However, a transistor specifically designed for linear amplification may be a better choice.
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2SD2012(F,M) Overview
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