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2SD2012 - STMicroelectronics

Description: Bipolar (BJT) Single Transistor, NPN, 60 V, 3 MHz, 25 W, 3 A, 20 RoHS Compliant: Yes

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2SD2012 - STMicroelectronics - PCB symbol
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PCB Footprints
2SD2012 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3-Pin TO-220
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3D Models
2SD2012 - STMicroelectronics - 3D model - Transistor Outline, Vertical - 3-Pin TO-220
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2SD2012 Details

  • Manufacturer Part Number:

    2SD2012

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220F, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    20

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    25 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

2SD2012 Frequently Asked Questions (FAQs)

  • The 2SD2012 is a low-frequency transistor, and its maximum operating frequency is typically around 100 kHz to 200 kHz. However, this can vary depending on the specific application and circuit design.
  • To ensure the 2SD2012 transistor is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is around 0.7V, and the collector-emitter voltage (Vce) is around 1-2V. You should also ensure that the transistor is operated within its recommended operating conditions, such as current and power dissipation.
  • The maximum power dissipation of the 2SD2012 transistor is around 1W. However, this can vary depending on the specific application and operating conditions. It's essential to ensure that the transistor is operated within its recommended power dissipation to prevent overheating and damage.
  • While the 2SD2012 transistor can be used in switching applications, it's not the most suitable choice due to its relatively slow switching speed and high saturation voltage. For switching applications, it's recommended to use a transistor with faster switching speeds and lower saturation voltage, such as a MOSFET or a high-speed bipolar transistor.
  • To protect the 2SD2012 transistor from overheating, ensure that it is operated within its recommended power dissipation and that the ambient temperature is within the recommended range. You can also use a heat sink to dissipate heat, and ensure good airflow around the transistor. Additionally, consider using a thermal protection circuit to detect overheating and shut down the transistor if necessary.

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2SD2012 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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