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2SD2165-AZ - Renesas Electronics

Description: Support is limited to customers who have already adopted these products.A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.

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2SD2165-AZ - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2SD2165
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2SD2165-AZ - Renesas Electronics  - 3D model - Transistor Outline, Vertical - 2SD2165
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2SD2165-AZ Details

  • Manufacturer Part Number:

    2SD2165-AZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-45F

  • Package Description:

    PLASTIC PACKAGE-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0003AK-A3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    6 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    500

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    30 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    110 MHz

2SD2165-AZ Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing a thermal pad under the transistor, using a large copper area for heat dissipation, and keeping the thermal path as short as possible. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it is essential to follow the recommended derating curves, ensure good thermal design, and consider using a heat sink or thermal interface material. Additionally, the device should be operated within the specified maximum junction temperature (Tj) of 150°C.
  • To prevent damage, handle the device by the body and avoid touching the leads or pins. Store the device in a dry, cool place, away from direct sunlight and moisture. Avoid bending or flexing the leads, and use anti-static packaging and handling procedures to prevent electrostatic discharge (ESD) damage.
  • Yes, the 2SD2165-AZ is suitable for switching applications due to its high switching speed and low saturation voltage. However, it is essential to ensure that the device is operated within the specified maximum ratings and that the switching frequency is within the recommended range.
  • To determine the suitable heat sink for this transistor, calculate the maximum power dissipation (Pd) based on the application requirements and then select a heat sink with a thermal resistance (Rth) that meets the required junction-to-ambient thermal resistance (Rth(j-a)).

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2SD2165-AZ Overview

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Part Image 2SD2165 NEC Electronics Group

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Part Image 2SD2165 Renesas Electronics Corporation

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin