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2SD2525(TP,Q) - Toshiba

Description: Bipolar Transistors - BJT Pb-FF TPL PLS-PW PLN-N,ACTIVE,

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2SD2525(TP,Q) - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-10T1A
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2SD2525(TP,Q) - Toshiba  - 3D model - Transistor Outline, Vertical - 2-10T1A
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2SD2525(TP,Q) Details

  • Manufacturer Part Number:

    2SD2525(TP,Q)

  • Part Life Cycle Code:

    End Of Life

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0.4

  • Collector Current-Max (IC):

    3 A

  • Collector-Base Capacitance-Max:

    35 pF

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    20

  • JESD-30 Code:

    R-XSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    1.8 W

  • Power Dissipation-Max (Abs):

    1.8 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

  • VCEsat-Max:

    1 V

2SD2525(TP,Q) Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the 2SD2525(TP,Q) transistor is a standard TO-252 (D-PAK) footprint with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 4.5mm x 4.5mm.
  • To ensure reliable operation of the 2SD2525(TP,Q) transistor in high-temperature environments, it is recommended to follow proper thermal management practices, such as using a heat sink, ensuring good airflow, and keeping the junction temperature below the maximum rated value of 150°C.
  • The maximum safe operating area (SOA) for the 2SD2525(TP,Q) transistor is not explicitly stated in the datasheet, but it can be estimated based on the transistor's voltage and current ratings. As a general rule, it is recommended to operate the transistor within 80% of its maximum voltage and current ratings to ensure reliable operation.
  • Yes, the 2SD2525(TP,Q) transistor can be used in switching applications, but it is not optimized for high-frequency switching. The transistor's switching characteristics, such as its rise and fall times, may not be suitable for high-frequency applications. It is recommended to consult the datasheet and application notes for more information on using the transistor in switching applications.
  • To handle ESD protection for the 2SD2525(TP,Q) transistor, it is recommended to follow proper ESD handling procedures, such as using an ESD wrist strap or mat, and ensuring that the transistor is stored in an ESD-protected environment. Additionally, it is recommended to use ESD protection devices, such as TVS diodes, in the circuit design to protect the transistor from ESD events.

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2SD2525(TP,Q) Overview

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