- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for 2SD633
- Part Number 2SD633
- Manufacturer Toshiba
- Pin Count 3
- Part Category Transistor BJT NPN
- Package Category Transistor Outline, Vertical
- Footprint Name Transistor Outline, Vertical - 2SD633
- Released Date May 5, 2021
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
2SD633 Details
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Manufacturer Part Number:
2SD633
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Part Life Cycle Code:
Obsolete
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Package Description:
SC-46, 3 PIN
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ECCN Code:
EAR99
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Manufacturer:
Toshiba America Electronic Components
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YTEOL:
0
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Collector Current-Max (IC):
7 A
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Configuration:
SINGLE
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DC Current Gain-Min (hFE):
2000
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JEDEC-95 Code:
TO-220AB
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JESD-30 Code:
R-PSFM-T3
2SD633 Frequently Asked Questions (FAQs)
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The SOA is not explicitly stated in the datasheet, but it can be estimated based on the maximum ratings and the thermal characteristics. A safe operating area can be estimated by considering the maximum voltage and current ratings, as well as the thermal resistance and maximum junction temperature.
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The base resistor value depends on the specific application, the desired current gain, and the input signal characteristics. A general rule of thumb is to choose a base resistor value that limits the base current to 1/10th of the collector current. Additionally, the base resistor value should be chosen to ensure that the transistor is fully saturated in the on-state.
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The minimum collector-emitter saturation voltage is not explicitly stated in the datasheet, but it can be estimated based on the typical Vce(sat) value provided. A typical Vce(sat) value is around 1-2V, but it can vary depending on the operating conditions and the specific application.
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The 2SD633 transistor is suitable for high-frequency applications, but the maximum frequency of operation depends on the specific application and the operating conditions. The transistor's transition frequency (fT) is around 30MHz, which indicates that it can handle high-frequency signals. However, the actual frequency of operation may be limited by the parasitic capacitances, lead inductances, and other external circuit components.
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To ensure the transistor is fully turned off, the base-emitter voltage should be reverse-biased, typically around -5V to -10V. Additionally, the base resistor value should be chosen to ensure that the base current is limited to a very small value, ideally less than 1uA.
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