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2SJ201-Y(F) - Toshiba

Description: MOSFET P-CH 200V 12A TO-3PL

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PCB Footprints
2SJ201-Y(F) - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-21F1B
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3D Models
2SJ201-Y(F) - Toshiba  - 3D model - Transistor Outline, Vertical - 2-21F1B
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2SJ201-Y(F) Details

  • Manufacturer Part Number:

    2SJ201-Y(F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    12 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Number of Elements:

    1

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Surface Mount:

    NO

2SJ201-Y(F) Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SJ201-Y(F) is -40°C to 150°C, although the device can withstand storage temperatures from -55°C to 180°C.
  • To ensure reliability in high-temperature applications, it is recommended to derate the device's power dissipation according to the temperature derating curve provided in the datasheet, and to ensure good thermal design and heat sinking.
  • The maximum allowable power dissipation for the 2SJ201-Y(F) is 125W at a case temperature of 25°C, although this value decreases as the temperature increases.
  • To prevent ESD damage, it is recommended to handle the 2SJ201-Y(F) with anti-static precautions, such as using an anti-static wrist strap, mat, or packaging, and to avoid touching the device's pins or leads.
  • The typical turn-on and turn-off time for the 2SJ201-Y(F) is around 10-20ns, although this value can vary depending on the specific application and operating conditions.

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2SJ201-Y(F) Overview

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