Part Image

2SJ329-AZ - Renesas Electronics

Description: The 2SJ329 is a Switching P-Channel Power MOSFET.

Download 2SJ329-AZ Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
2SJ329-AZ - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PRSS0003AK-A
click to zoom
3D Models
2SJ329-AZ - Renesas Electronics  - 3D model - Transistor Outline, Vertical - PRSS0003AK-A
click to zoom

2SJ329-AZ Details

  • Manufacturer Part Number:

    2SJ329-AZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-45F

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0003AK

  • ECCN Code:

    EAR99

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    490 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    530 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

2SJ329-AZ Overview

Use the download button to access the 2SJ329-AZ schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like 2SJ32, or try a keyword search, such as Power Field-Effect Transistors

Parts related to 2SJ329-AZ

Showing 0 results

2SJ329-AZ Alternates

Showing results

Image Part Number Model
Part Image 2SJ329-AZ NEC Electronics Group

Power Field-Effect Transistor, 15A I(D), 60V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image 2SJ329 Renesas Electronics Corporation

Power Field-Effect Transistor, 15A I(D), 60V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET