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2SJ494-AZ - Renesas Electronics

Description: The 2SJ494 is a Switching P-Channel Power MOSFET.

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2SJ494-AZ - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2SJ494-AZ
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2SJ494-AZ - Renesas Electronics  - 3D model - Transistor Outline, Vertical - 2SJ494-AZ
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2SJ494-AZ Details

  • Manufacturer Part Number:

    2SJ494-AZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-45F

  • Package Description:

    ISOLATED TO-220, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0003AK-A3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.088 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    350 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SJ494-AZ Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the 2SJ494-AZ is 15V to 30V, although it can withstand up to 40V for short periods.
  • To ensure linear operation, the 2SJ494-AZ requires a bias voltage of at least 2V between the gate and source pins, and a drain-source voltage of at least 5V.
  • The maximum power dissipation of the 2SJ494-AZ is 125W, but this can be increased with proper heat sinking and thermal management.
  • While the 2SJ494-AZ can be used for switching applications, it is not optimized for high-frequency switching due to its relatively high gate charge and input capacitance. For high-frequency switching, a different device may be more suitable.
  • To protect the 2SJ494-AZ from overvoltage and overcurrent, use a voltage regulator or overvoltage protection circuit, and consider adding current sensing and limiting circuitry to prevent excessive current draw.

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2SJ494-AZ Overview

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Part Image 2SJ494 NEC Electronics Group

Power Field-Effect Transistor, 20A I(D), 60V, 0.088ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET