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2SJ527L - Renesas Electronics

Description: Low on-resistance RDS(on) = 0.3 Ω typ

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2SJ527L - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2SJ527L
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2SJ527L - Renesas Electronics  - 3D model - Transistor Outline, Vertical - 2SJ527L
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2SJ527L Details

  • Manufacturer Part Number:

    2SJ527L

  • Pbfree Code:

    No

  • Rohs Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • Reach Compliance Code:

    Compliant

  • ECCN Code:

    EAR99

  • Date Of Intro:

    1998-06-01

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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2SJ527L Overview

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Part Image 2SJ527L-E Renesas Electronics Corporation

Power Field-Effect Transistor, 5A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET