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2SJ606-AZ - Renesas Electronics

Description: The 2SJ606 is a Pch Single Power Mosfet -60V -83A 15Mohm Mp-25/To-220Ab.

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2SJ606-AZ - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB (MP-25)
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2SJ606-AZ - Renesas Electronics  - 3D model - Transistor Outline, Vertical - TO-220AB (MP-25)
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2SJ606-AZ Details

  • Manufacturer Part Number:

    2SJ606-AZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-25

  • Package Description:

    MP-25, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0004AH

  • ECCN Code:

    EAR99

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    160 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    83 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    340 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    1.5 W

  • Power Dissipation-Max (Abs):

    120 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SJ606-AZ Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SJ606-AZ is -40°C to 150°C, although it can withstand storage temperatures from -55°C to 175°C.
  • To ensure proper biasing, the 2SJ606-AZ requires a gate-source voltage (Vgs) between 2V and 4V, and a drain-source voltage (Vds) between 10V and 30V. Additionally, the gate current (Ig) should be limited to 10mA or less.
  • The maximum allowable power dissipation for the 2SJ606-AZ is 125W, although this can be increased to 250W with proper heat sinking and thermal management.
  • To protect the 2SJ606-AZ from ESD, handle the device with anti-static wrist straps, mats, or bags, and avoid touching the pins or leads. Additionally, use ESD-sensitive devices and equipment during assembly and testing.
  • The typical switching frequency for the 2SJ606-AZ is up to 100kHz, although it can operate at higher frequencies with proper design and layout considerations.

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2SJ606-AZ Overview

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Part Image 2SJ606 Renesas Electronics Corporation

Power Field-Effect Transistor, 83A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB