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2SJ606-Z-AZ - Renesas Electronics

Description: The 2SJ606-Z is a Pch Single Power Mosfet -60V -83A 15Mohm Mp-25Z/To-220Smd.

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2SJ606-Z-AZ Details

  • Manufacturer Part Number:

    2SJ606-Z-AZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-25Z

  • Package Description:

    TO-220SMD, 3/2 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0004AJ-B3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    160 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    83 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    340 pF

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    1.5 W

  • Power Dissipation-Max (Abs):

    120 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SJ606-Z-AZ Frequently Asked Questions (FAQs)

  • Renesas provides a recommended PCB layout in their application note (APN) or design guide, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
  • The 2SJ606-Z-AZ requires a specific biasing scheme to operate within its recommended operating conditions. Renesas provides a recommended biasing circuit in their datasheet or application note, which includes the necessary resistors, capacitors, and voltage sources to ensure proper biasing.
  • Renesas provides recommended soldering conditions, including temperature profiles, soldering times, and flux types, in their datasheet or packaging information. Following these guidelines ensures reliable assembly and minimizes the risk of damage during the soldering process.
  • Renesas recommends following standard ESD protection procedures, such as using anti-static wrist straps, mats, and packaging materials, to prevent electrostatic discharge damage during handling and assembly. Additionally, the device should be stored in its original packaging or an ESD-protective bag when not in use.
  • Renesas provides reliability and quality metrics, such as MTBF (Mean Time Between Failures), FIT (Failure In Time), and defect rates, in their datasheet or quality documentation. These metrics can help engineers assess the device's reliability and quality in their specific application.

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2SJ606-Z-AZ Overview

Use the download button to access the 2SJ606-Z-AZ 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Part Image 2SJ606-Z-AZ NEC Electronics Group

Power Field-Effect Transistor, 83A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image 2SJ606-Z NEC Electronics Group

Power Field-Effect Transistor, 83A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET