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2SJ652-1E - onsemi

Description: ON SEMICONDUCTOR - 2SJ652-1E - P-Channel Power MOSFET, -60V, -28A, 38mOhm, TO-220F-3SG / TUBE

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2SJ652-1E - onsemi - PCB symbol
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PCB Footprints
2SJ652-1E - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2SJ652-1E
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3D Models
2SJ652-1E - onsemi - 3D model - Transistor Outline, Vertical - 2SJ652-1E
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2SJ652-1E Details

  • Manufacturer Part Number:

    2SJ652-1E

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220F-3FS, 3 PIN

  • Manufacturer Package Code:

    221AT

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    28 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Operating Temperature-Max:

    150 °C

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

2SJ652-1E Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the 2SJ652-1E is 10V to 30V, with a maximum voltage rating of 40V.
  • To ensure stability, it's essential to follow the recommended PCB layout guidelines, use a suitable output capacitor, and ensure the input voltage is within the recommended range.
  • The maximum output current capability of the 2SJ652-1E is 1.5A, but it's recommended to derate the output current based on the ambient temperature and other application-specific factors.
  • To protect the 2SJ652-1E from overheating, ensure good thermal conductivity between the device and the PCB, use a suitable heat sink if necessary, and avoid operating the device at maximum power dissipation for extended periods.
  • The 2SJ652-1E has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing to prevent damage to the device.

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2SJ652-1E Overview

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2SJ652-1E Alternates

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Image Part Number Model
Part Image 2SJ652 SANYO Electric Co Ltd

Power Field-Effect Transistor, 28A I(D), 60V, 0.0555ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Image 2SJ652 onsemi

Power Field-Effect Transistor, 28A I(D), 60V, 0.0555ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB