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2SJ652 - Sanyo

Description: General-Purpose Switching Device Applications

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2SJ652 - Sanyo PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2SJ652
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2SJ652 - Sanyo  - 3D model - Transistor Outline, Vertical - 2SJ652
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2SJ652 Details

  • Manufacturer Part Number:

    2SJ652

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220ML, FULL PACK-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    SANYO Semiconductor Co Ltd

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    28 A

  • Drain-source On Resistance-Max:

    0.0555 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    112 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SJ652 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2SJ652 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure safe operation.
  • To ensure the 2SJ652 is properly biased for linear operation, you should follow the recommended biasing conditions outlined in the datasheet, including the base-emitter voltage (VBE) and collector-emitter voltage (VCE). Additionally, you should ensure that the device is operated within the specified current and voltage ranges, and that the load impedance is properly matched to the device's output impedance.
  • The recommended PCB layout and thermal management for the 2SJ652 involve using a thermally conductive PCB material, placing the device on a heat sink or thermal pad, and ensuring good airflow around the device. You should also minimize the thermal resistance between the device and the heat sink or thermal pad, and use thermal vias to dissipate heat efficiently.
  • To handle ESD protection for the 2SJ652, you should follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and storing the devices in anti-static packaging. You should also ensure that the device is properly grounded during handling and assembly, and that ESD-sensitive components are protected with ESD diodes or other protection devices.
  • The reliability and lifespan expectations for the 2SJ652 depend on various factors, including operating conditions, environmental factors, and manufacturing quality. According to the datasheet, the device has a typical lifespan of 100,000 hours at a junction temperature of 125°C. However, actual lifespan may vary depending on the specific application and operating conditions.

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Part Image 2SJ652 SANYO Electric Co Ltd

Power Field-Effect Transistor, 28A I(D), 60V, 0.0555ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image 2SJ652 onsemi

Power Field-Effect Transistor, 28A I(D), 60V, 0.0555ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB