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2SJ681(Q) - Toshiba

Description: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

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2SJ681(Q) - Toshiba - PCB symbol
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PCB Footprints
2SJ681(Q) - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-7J2B-1
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3D Models
2SJ681(Q) - Toshiba - 3D model - Transistor Outline, Vertical - 2-7J2B-1
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2SJ681(Q) Details

  • Manufacturer Part Number:

    2SJ681(Q)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    40.5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    20 W

  • Power Dissipation-Max (Abs):

    20 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SJ681(Q) Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SJ681(Q) is -40°C to 150°C, but it can withstand storage temperatures from -55°C to 180°C.
  • To ensure reliability in high-temperature applications, it's essential to follow the recommended derating curves for voltage and current, and to provide adequate heat sinking and thermal management.
  • The maximum allowable power dissipation for the 2SJ681(Q) is 125W, but this can be affected by the operating temperature, PCB layout, and heat sinking.
  • Yes, the 2SJ681(Q) can be used in switching regulator applications, but it's essential to ensure that the device is operated within its safe operating area (SOA) and that the switching frequency is within the recommended range.
  • To protect the 2SJ681(Q) from ESD, it's recommended to follow proper handling and storage procedures, use ESD-safe packaging and materials, and implement ESD protection circuits in the design.

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2SJ681(Q) Overview

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