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2SK1358 - Toshiba

Description: MOSFET Transistor, N-Channel, TO-247VAR

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2SK1358 - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-16C1B
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2SK1358 - Toshiba  - 3D model - Transistor Outline, Vertical - 2-16C1B
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2SK1358 Details

  • Manufacturer Part Number:

    2SK1358

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3PN

  • Package Description:

    SC-65, 3 PIN

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    150 pF

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    150 W

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    27 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    200 ns

  • Turn-on Time-Max (ton):

    80 ns

2SK1358 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2SK1358 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to operate the device within the specified thermal boundaries to ensure reliable operation.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet, including the base-emitter voltage (VBE) and collector-emitter voltage (VCE). Additionally, consider the device's current gain (hFE) and ensure the base current is sufficient to maintain the desired collector current. It's also essential to consider the device's thermal characteristics and ensure adequate heat sinking to prevent overheating.
  • For optimal thermal performance, it's recommended to use a PCB layout that minimizes thermal resistance and ensures good heat dissipation. This can be achieved by using a thermal pad or heat sink, and ensuring good thermal conductivity between the device and the PCB. Additionally, consider using thermal vias and thermal layers in the PCB design to further improve heat dissipation.
  • To protect the 2SK1358 from ESD, follow proper handling and storage procedures, such as using anti-static bags or containers, and grounding yourself before handling the device. Additionally, consider implementing ESD protection circuits or devices in your design, such as TVS diodes or ESD protection arrays, to protect the device from voltage transients and ESD events.
  • The reliability and lifespan of the 2SK1358 depend on various factors, including operating conditions, environmental factors, and manufacturing quality. Toshiba provides reliability data and lifetest results in the datasheet, which can be used to estimate the device's lifespan. However, it's essential to consider the specific application and operating conditions to ensure the device meets the required reliability and lifespan expectations.

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