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2SK1365 - Toshiba

Description: MOSFET 3PNIS PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-01)/OBSOLETE(10-04),

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2SK1365 - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 1-1G1A
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2SK1365 - Toshiba  - 3D model - Transistor Outline, Vertical - 1-1G1A
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2SK1365 Details

  • Manufacturer Part Number:

    2SK1365

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    LEAD FREE, 2-16F1B, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    1.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    100 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Pulsed Drain Current-Max (IDM):

    21 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK1365 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SK1365 is -55°C to 150°C, although the datasheet only specifies the electrical characteristics up to 125°C.
  • To ensure the 2SK1365 is properly biased for linear operation, the gate-source voltage (Vgs) should be set between 2V to 4V, and the drain-source voltage (Vds) should be set between 10V to 30V, depending on the specific application requirements.
  • The maximum allowable power dissipation for the 2SK1365 is 125W, but this value can be derated based on the operating temperature and other factors. It's essential to perform thermal calculations to ensure the device does not exceed its maximum power rating.
  • While the 2SK1365 is primarily designed for linear applications, it can be used in switching applications with proper design considerations. However, the device's switching characteristics, such as rise and fall times, may not be optimized for high-frequency switching.
  • To minimize parasitic inductance and ensure optimal performance, it's recommended to use a low-inductance PCB layout, keep the lead lengths short, and use a solid ground plane. Additionally, the device's thermal pad should be connected to a heat sink or a thermal relief pattern to improve heat dissipation.

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