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2SK1671-E - Renesas Electronics

Description: The 2SK1671 is a Nch Single Power Mosfet 250V 30A 95Mohm To-3P.

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2SK1671-E - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PRSS0004ZE-A-2021
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2SK1671-E - Renesas Electronics  - 3D model - Transistor Outline, Vertical - PRSS0004ZE-A-2021
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2SK1671-E Details

  • Manufacturer Part Number:

    2SK1671-E

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3P

  • Package Description:

    SC-65, TO-3P, 3 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    PRSS0004ZE

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    111 Weeks

  • Date Of Intro:

    1996-11-01

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    170 pF

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Copper (Sn/Cu)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK1671-E Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the 2SK1671-E is 10V to 30V, although the absolute maximum rating is 40V.
  • To ensure proper thermal management, it is recommended to attach a heat sink to the device, and to keep the junction temperature (Tj) below 150°C. The thermal resistance (Rth) of the device is 2.5°C/W.
  • The maximum current rating of the 2SK1671-E is 10A, although the recommended operating current is 5A to ensure reliable operation.
  • Yes, the 2SK1671-E is suitable for high-frequency switching applications up to 100kHz, thanks to its low gate charge and fast switching times.
  • To protect the 2SK1671-E from overvoltage and overcurrent, it is recommended to use a voltage regulator and a current limiter in the circuit design. Additionally, a freewheeling diode can be used to protect the device from back-EMF.

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2SK1671-E Overview

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Part Image 2SK1671 Hitachi Ltd

Power Field-Effect Transistor, 30A I(D), 0.095ohm, 1-Element, N-Channel, Metal-oxide Semiconductor FET