Part Image

2SK2512-AZ - Renesas Electronics

Description: The 2SK2512 is a Switching N-Channel Power Mosfet.

Download 2SK2512-AZ Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
2SK2512-AZ - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - MP-45F (ISOLATED)
click to zoom
3D Models
2SK2512-AZ - Renesas Electronics  - 3D model - Transistor Outline, Vertical - MP-45F (ISOLATED)
click to zoom

2SK2512-AZ Details

  • Manufacturer Part Number:

    2SK2512-AZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-45F

  • Package Description:

    ISOLATED TO-220, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0003AK-A3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    45 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    500 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Packing Method:

    BAG

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK2512-AZ Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SK2512-AZ is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Additionally, ensure that the gate-source voltage (Vgs) is within the recommended range, typically between -2V to 2V, and the drain-source voltage (Vds) is within the specified maximum rating.
  • The maximum allowable power dissipation for the 2SK2512-AZ is dependent on the operating temperature and the thermal resistance of the package. Refer to the datasheet for the specific power dissipation curves and thermal resistance values to ensure the device operates within safe limits.
  • Yes, the 2SK2512-AZ is suitable for high-frequency switching applications due to its low gate charge and high switching speed. However, it's essential to consider the device's parasitic capacitances, gate resistance, and inductance to ensure optimal performance and minimize ringing and oscillations.
  • To protect the 2SK2512-AZ from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, ensure that the device is properly grounded during assembly and testing, and consider using ESD protection devices or circuits in the final application.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

2SK2512-AZ Overview

Use the download button to access the 2SK2512-AZ schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like 2SK25, or try a keyword search, such as Power Field-Effect Transistors

Parts related to 2SK2512-AZ

Showing 0 results

2SK2512-AZ Alternates

Showing results

Image Part Number Model
Part Image 2SK2512-AZ NEC Electronics Group

Power Field-Effect Transistor, 45A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image 2SK2512 NEC Electronics Group

Power Field-Effect Transistor, 45A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET