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2SK2730-E - Renesas Electronics

Description: Trans MOSFET N-CH Si 500V 25A 3-Pin(3+Tab) TO-3P Box

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PCB Footprints
2SK2730-E - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO–3P-2021
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3D Models
2SK2730-E - Renesas Electronics  - 3D model - Transistor Outline, Vertical - TO–3P-2021
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2SK2730-E Details

  • Manufacturer Part Number:

    2SK2730-E

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3P

  • Package Description:

    SC-65, TO-3P, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    111 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    35 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.24 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    150 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    175 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK2730-E Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SK2730-E is -40°C to 150°C, although it can withstand storage temperatures from -55°C to 175°C.
  • To ensure proper biasing, the 2SK2730-E requires a gate-source voltage (Vgs) between 2V and 10V, and a drain-source voltage (Vds) between 10V and 30V. Additionally, the gate current (Ig) should be limited to 10mA or less.
  • The maximum allowable power dissipation for the 2SK2730-E is 125W, although this can be increased to 250W with proper heat sinking and thermal management.
  • To protect the 2SK2730-E from ESD, handle the device with anti-static wrist straps, mats, or bags, and avoid touching the pins or leads. Additionally, ensure that the device is stored in a conductive bag or container when not in use.
  • The typical switching frequency for the 2SK2730-E is up to 100kHz, although it can be used in applications with higher frequencies with proper design and layout considerations.

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2SK2730-E Overview

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Part Image 2SK2730 Hitachi Ltd

Power Field-Effect Transistor, 25A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image 2SK2730 Renesas Electronics Corporation

Power Field-Effect Transistor, 25A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET