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2SK2927-E - Renesas Electronics

Description: The 2SK2927 is a Nch Single Power Mosfet 60V 10A 75Mohm To-220Ab.

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2SK2927-E - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PRSS0004AC-A
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3D Models
2SK2927-E - Renesas Electronics  - 3D model - Transistor Outline, Vertical - PRSS0004AC-A
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2SK2927-E Details

  • Manufacturer Part Number:

    2SK2927-E

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    SC-46, 3 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    PRSS0004AC

  • ECCN Code:

    EAR99

  • Date Of Intro:

    1997-08-01

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    8.5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.15 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    70 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Copper (Sn/Cu)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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2SK2927-E Overview

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2SK2927-E Alternates

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Image Part Number Model
Part Image 2SK2927 Hitachi Ltd

Power Field-Effect Transistor, 10A I(D), 0.15ohm, 1-Element, N-Channel, Metal-oxide Semiconductor FET, TO-220AB

Part Image 2SK2927 Renesas Electronics Corporation

Power Field-Effect Transistor, 10A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB