Part Image

2SK3057-AZ - Renesas Electronics

Description: The 2SK3057 is a Switching N Channel MOSFET.

Download 2SK3057-AZ Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
2SK3057-AZ - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - ISOLATED TO-220 (MP-45F)
click to zoom
3D Models
2SK3057-AZ - Renesas Electronics  - 3D model - Transistor Outline, Vertical - ISOLATED TO-220 (MP-45F)
click to zoom

2SK3057-AZ Details

  • Manufacturer Part Number:

    2SK3057-AZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-45F

  • Package Description:

    ISOLATED TO-220, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0003AK

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    50.6 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    45 A

  • Drain-source On Resistance-Max:

    0.027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    220 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK3057-AZ Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SK3057-AZ is -40°C to 150°C, although it can withstand storage temperatures from -55°C to 175°C.
  • To ensure proper biasing, the 2SK3057-AZ requires a gate-source voltage (Vgs) between 2V and 10V, and a drain-source voltage (Vds) between 10V and 60V. Additionally, the gate current (Ig) should be limited to 10mA or less.
  • The maximum allowable power dissipation for the 2SK3057-AZ is 125W, although this can be increased to 250W with proper heat sinking and thermal management.
  • To protect the 2SK3057-AZ from ESD, handle the device with anti-static wrist straps, mats, or bags, and avoid touching the pins or leads. Additionally, ensure that the device is stored in a conductive bag or container when not in use.
  • The typical switching frequency for the 2SK3057-AZ is up to 100kHz, although it can be used in applications with higher frequencies with proper design and layout considerations.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

2SK3057-AZ Overview

Use the download button to access the 2SK3057-AZ schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like 2SK30, or try a keyword search, such as Power Field-Effect Transistors

Parts related to 2SK3057-AZ

Showing 0 results

2SK3057-AZ Alternates

Showing results

Image Part Number Model
Part Image 2SK3057-AZ NEC Electronics Group

Power Field-Effect Transistor, 45A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image 2SK3057 Renesas Electronics Corporation

Power Field-Effect Transistor, 45A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image 2SK3057 NEC Electronics Group

Power Field-Effect Transistor, 45A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET