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2SK3109-AZ - Renesas Electronics

Description: N-Channel MOSFET Transistor, 10 A, 200 V, 3-Pin

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2SK3109-AZ - Renesas Electronics PCB footprint - Other - Other - PRSS0004AH-A
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2SK3109-AZ - Renesas Electronics  - 3D model - Other - PRSS0004AH-A
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2SK3109-AZ Details

  • Manufacturer Part Number:

    2SK3109-AZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-25

  • Package Description:

    MP-25, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0004AH

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    35 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK3109-AZ Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SK3109-AZ is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Additionally, consider the device's thermal characteristics, such as thermal resistance and power dissipation, to prevent overheating and ensure reliable operation.
  • When selecting a heat sink for the 2SK3109-AZ, consider the device's power dissipation, thermal resistance, and maximum junction temperature. Ensure the heat sink's thermal resistance is low enough to maintain the device's junction temperature within the recommended range. Additionally, consider the heat sink's size, material, and mounting method to ensure effective heat dissipation.
  • To protect the 2SK3109-AZ from ESD, follow standard ESD handling procedures, such as using anti-static wrist straps, mats, and packaging materials. Ensure that the device is stored and handled in a controlled environment, and avoid touching the device's pins or exposed internal components.
  • When designing a PCB for the 2SK3109-AZ, consider the device's pinout, thermal characteristics, and power supply requirements. Ensure proper decoupling, grounding, and routing to minimize noise, electromagnetic interference (EMI), and thermal issues. Follow Renesas' recommended PCB layout guidelines and consult with experienced designers or application notes for specific guidance.

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2SK3109-AZ Overview

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Power Field-Effect Transistor, 10A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB